27 Septembre – Thesis defense - Omar Chihani
10 h Amphi Jean-Paul Dom - Laboratory IMS (building A31 / Talence)
Evaluation of the robustness of GaN technologies in power conversion.
The aim of the thesis is to study the reliability of GaN HEMT transistor. Aging in voltage and temperature are undertaken to identify and model the different modes of failure activated at extreme conditions of use.