18 Décembre – Thesis defense - Raphaël Guillaume

09 h30 Amphi Jean-Paul Dom - Laboratory IMS / building A31 (University of Bordeaux - Talence campus)

Millimeter-wave and terahertz frequency synthesis on advanced silicon technology.

In recent years, millimeter-wave (mm-wave) and terahertz (THz) frequency bands have revealed a great potential for many applications such as medical and biological imaging, quality control, and very-high-speed communications. The main reasons for this interest are the many interesting properties of THz and millimeter waves, such as their ability to harmlessly penetrate through matter or the broad spectrum available at these frequencies. Targeted applications require energy efficient signal sources with high power output and, for some applications, low phase noise. In addition, the increasing demand in mm-wave/THz applications requires the use of a cost-optimized, high-performance, and very large scale integration (VLSI) technologies, such as the 28nm CMOS FD-SOI technology.
In this context, this thesis proposes an innovative solution for mm-wave and THz frequency generation in CMOS technology: the injection locked distributed oscillator (ILDO). The work presented in this manuscript includes the detailed analysis of the state-of-the-art and its limitations, the detailed theoretical study of the proposed millimeter-waves band solution, the development of a specific design methodology in CMOS technology as well as the design of technological demonstrators. The several 28nm FDSOI integrated distributed oscillators at 134 GHz and respectively 200 GHz have demonstrated the feasibility of mm-wave and THz signal sources with high-energy efficiency, high output power, and low phase noise in a VLSI CMOS technology. Finally, the injection locking capability of such distributed oscillators has been demonstrated experimentally paving the way for a future silicon-based fully integrated THz systems. The proposed circuits are as of today the highest oscillation frequency solutions demonstrated in a 28nm CMOS Silicon technology.

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