09 Octobre – Thesis defense - Samuel Redois
10 h Amphi J.P. Dom - laboratory IMS / Building A31 (Talence campus)
Conception et réalisation d'un amplificateur de puissance en bande X pour application RADAR.
In order to respond to the increasing integration and ramp-up of airborne electronic systems, new Radar architectures are developed. To meet these technological challenges, silicon technologies are in the process of replacing III-V technologies, such as AsGa technology, in the performance of similar functions. In particular, the relevance of SiGe technology has been shown in several studies thanks to its power handling, miniaturization and high-frequency operation. In order to ensure high-power operation while maintaining the reliability criteria for active antenna radar applications, several balanced architectures have been developed. A design methodology for power combiners and amplifiers has been developed to take full advantage of the benefits offered by SiGe technology. These circuits are integrated and validated to highlight the relevance of SiGe technology for medium and high power X-band applications.